{"created":"2024-10-28T02:47:59.621523+00:00","id":2004091,"links":{},"metadata":{"_buckets":{"deposit":"195c65a9-dfeb-46d8-9346-602c874b4f7e"},"_deposit":{"created_by":7,"id":"2004091","owners":[7],"pid":{"revision_id":0,"type":"depid","value":"2004091"},"status":"published"},"_oai":{"id":"oai:tokushima-u.repo.nii.ac.jp:02004091","sets":["1713853213384:1713853295607"]},"author_link":["740","420"],"item_10001_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2016-04-28","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"6S1","bibliographicPageStart":"06GF03","bibliographicVolumeNumber":"55","bibliographic_titles":[{"bibliographic_title":"Japanese Journal of Applied Physics","bibliographic_titleLang":"en"}]}]},"item_10001_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The thermal decomposition of silicon carbide (SiC) is a promising method for producing wafer-scale single-crystal graphene. The optimal growth condition for high-mobility epitaxial graphene fabricated by infrared rapid thermal annealing is discussed in this paper. The surface structures, such as step-terrace and graphene coverage structures, on a non-off-axis SiC(0001) substrate were well controlled by varying the annealing time in a range below 10 min. The mobility of graphene grown at 1620 ºC for 5 min in 100 Torr Ar ambient had a maximum value of 2089 cm2V-1s-1. We found that the causes of the mobility reduction were low graphene coverage, high sheet carrier density, and nonuniformity of the step structure.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10001_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"The Japan Society of Applied Physics","subitem_publisher_language":"en"}]},"item_10001_rights_15":{"attribute_name":"権利情報","attribute_value_mlt":[{"subitem_rights":" © 2016 The Japan Society of Applied Physics","subitem_rights_language":"en"}]},"item_10001_source_id_9":{"attribute_name":"収録物ID","attribute_value_mlt":[{"subitem_source_identifier":"13474065","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"00214922 ","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"AA11509854","subitem_source_identifier_type":"NCID"},{"subitem_source_identifier":"AA12295836","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_20":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_1715043197608":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access"}]},"item_1722929371688":{"attribute_name":"出版社版DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.7567/JJAP.55.06GF03","subitem_relation_type_select":"DOI"}}]},"item_1723180141928":{"attribute_name":"EID","attribute_value_mlt":[{"subitem_identifier_type":"URI","subitem_identifier_uri":"312461"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"アリツキ, タクヤ","creatorNameLang":"ja"},{"creatorName":"アリツキ, タクヤ","creatorNameLang":"ja-Kana"},{"creatorName":"Aritsuki, Takuya","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"ナカシマ, タケシ","creatorNameLang":"ja"},{"creatorName":"ナカシマ, タケシ","creatorNameLang":"ja-Kana"},{"creatorName":"Nakashima, Takeshi","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"コバヤシ, ケイスケ","creatorNameLang":"ja"},{"creatorName":"コバヤシ, ケイスケ","creatorNameLang":"ja-Kana"},{"creatorName":"Kobayashi, Keisuke","creatorNameLang":"en"}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"大野, 恭秀","creatorNameLang":"ja"},{"creatorName":"オオノ, ヤスヒデ","creatorNameLang":"ja-Kana"},{"creatorName":"Ohno, Yasuhide","creatorNameLang":"en"}],"familyNames":[{"familyName":"大野","familyNameLang":"ja"},{"familyName":"オオノ","familyNameLang":"ja-Kana"},{"familyName":"Ohno","familyNameLang":"en"}],"givenNames":[{"givenName":"恭秀","givenNameLang":"ja"},{"givenName":"ヤスヒデ","givenNameLang":"ja-Kana"},{"givenName":"Yasuhide","givenNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"740","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"288559/profile-ja.html","nameIdentifierScheme":"徳島大学 教育研究者総覧","nameIdentifierURI":"http://pub2.db.tokushima-u.ac.jp/ERD/person/288559/profile-ja.html"},{"nameIdentifier":"90362623","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/search/?qm=90362623"}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"永瀬, 雅夫","creatorNameLang":"ja"},{"creatorName":"ナガセ, マサオ","creatorNameLang":"ja-Kana"},{"creatorName":"Nagase, Masao","creatorNameLang":"en"}],"familyNames":[{"familyName":"永瀬","familyNameLang":"ja"},{"familyName":"ナガセ","familyNameLang":"ja-Kana"},{"familyName":"Nagase","familyNameLang":"en"}],"givenNames":[{"givenName":"雅夫","givenNameLang":"ja"},{"givenName":"マサオ","givenNameLang":"ja-Kana"},{"givenName":"Masao","givenNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"420","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"207318/profile-ja.html","nameIdentifierScheme":"徳島大学 教育研究者総覧","nameIdentifierURI":"http://pub2.db.tokushima-u.ac.jp/ERD/person/207318/profile-ja.html"},{"nameIdentifier":"20393762","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/search/?qm=20393762"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2017-11-22"}],"displaytype":"detail","filename":"jjap_55_6S1_06GF03.pdf","filesize":[{"value":"795 KB"}],"format":"application/pdf","mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://tokushima-u.repo.nii.ac.jp/record/2004091/files/jjap_55_6S1_06GF03.pdf"},"version_id":"730f9267-b489-46ba-9e6e-4f29c3a4c43a"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Epitaxial graphene on SiC formed by the surface structure control technique","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Epitaxial graphene on SiC formed by the surface structure control technique","subitem_title_language":"en"}]},"item_type_id":"40001","owner":"7","path":["1713853295607"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2017-11-22"},"publish_date":"2017-11-22","publish_status":"0","recid":"2004091","relation_version_is_last":true,"title":["Epitaxial graphene on SiC formed by the surface structure control technique"],"weko_creator_id":"7","weko_shared_id":-1},"updated":"2025-01-29T07:27:03.335654+00:00"}