{"created":"2024-10-28T02:48:05.347969+00:00","id":2004092,"links":{},"metadata":{"_buckets":{"deposit":"ac5c28d4-e09c-4fbc-9b60-6945262f99f0"},"_deposit":{"created_by":7,"id":"2004092","owners":[7],"pid":{"revision_id":0,"type":"depid","value":"2004092"},"status":"published"},"_oai":{"id":"oai:tokushima-u.repo.nii.ac.jp:02004092","sets":["1713853213384:1713853295607"]},"author_link":["420"],"item_10001_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2015-01-30","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"3","bibliographicPageStart":"036502","bibliographicVolumeNumber":"54","bibliographic_titles":[{"bibliographic_title":"Japanese Journal of Applied Physics","bibliographic_titleLang":"en"}]}]},"item_10001_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We report on the effects of UV light intensity on the photo assisted electrochemical wet etching of SiC(0001) underneath an epitaxially grown graphene for the fabrication of suspended structures. The maximum etching rate of SiC(0001) was 2.5µm/h under UV light irradiation in 1wt% KOH at a constant current of 0.5mA/cm2. The successful formation of suspended structures depended on the etching rate of SiC. In the Raman spectra of the suspended structures, we did not observe a significant increase in the intensity of the D peak, which originates from defects in graphene sheets. This is most likely explained by the high quality of the single-crystalline graphene epitaxially grown on SiC.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10001_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"The Japan Society of Applied Physics","subitem_publisher_language":"en"}]},"item_10001_rights_15":{"attribute_name":"権利情報","attribute_value_mlt":[{"subitem_rights":"© 2015 The Japan Society of Applied Physics","subitem_rights_language":"en"}]},"item_10001_source_id_9":{"attribute_name":"収録物ID","attribute_value_mlt":[{"subitem_source_identifier":"13474065","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"00214922 ","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"AA11509854","subitem_source_identifier_type":"NCID"},{"subitem_source_identifier":"AA12295836","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_20":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_1715043197608":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access"}]},"item_1722929371688":{"attribute_name":"出版社版DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_language":"ja","subitem_relation_name_text":"10.7567/JJAP.54.036502"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.7567/JJAP.54.036502","subitem_relation_type_select":"DOI"}}]},"item_1723180141928":{"attribute_name":"EID","attribute_value_mlt":[{"subitem_identifier_type":"URI","subitem_identifier_uri":"289594"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":" O, Ryong-Sok","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"タカムラ, マコト","creatorNameLang":"ja"},{"creatorName":"タカムラ, マコト","creatorNameLang":"ja-Kana"},{"creatorName":"Takamura, Makoto","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"フルカワ, カズアキ","creatorNameLang":"ja"},{"creatorName":"フルカワ, カズアキ","creatorNameLang":"ja-Kana"},{"creatorName":"Furukawa, Kazuaki","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"永瀬, 雅夫","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"420","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"日比野, 浩樹","creatorNameLang":"ja"},{"creatorName":"ヒビノ, ヒロキ","creatorNameLang":"ja-Kana"},{"creatorName":"Hibino, Hiroki","creatorNameLang":"en"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2017-11-22"}],"displaytype":"detail","filename":"jjap_54_3_036502.pdf","filesize":[{"value":"1.17 MB"}],"format":"application/pdf","mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://tokushima-u.repo.nii.ac.jp/record/2004092/files/jjap_54_3_036502.pdf"},"version_id":"9bbf1b1b-9485-43e0-aafb-3e4efeba7efe"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Effects of UV light intensity on electrochemical wet etching of SiC for the fabrication of suspended graphene","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Effects of UV light intensity on electrochemical wet etching of SiC for the fabrication of suspended graphene","subitem_title_language":"en"}]},"item_type_id":"40001","owner":"7","path":["1713853295607"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2017-11-22"},"publish_date":"2017-11-22","publish_status":"0","recid":"2004092","relation_version_is_last":true,"title":["Effects of UV light intensity on electrochemical wet etching of SiC for the fabrication of suspended graphene"],"weko_creator_id":"7","weko_shared_id":-1},"updated":"2024-10-28T02:48:14.126809+00:00"}