{"created":"2024-10-28T05:55:30.582459+00:00","id":2004981,"links":{},"metadata":{"_buckets":{"deposit":"74ae0f6a-1707-4525-a936-e562c4754bc4"},"_deposit":{"created_by":7,"id":"2004981","owners":[7],"pid":{"revision_id":0,"type":"depid","value":"2004981"},"status":"published"},"_oai":{"id":"oai:tokushima-u.repo.nii.ac.jp:02004981","sets":["1713853213384:1713853295607"]},"author_link":["73","1239"],"control_number":"2004981","item_10001_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-06-04","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"6","bibliographicPageStart":"065204","bibliographicVolumeNumber":"8","bibliographic_titles":[{"bibliographic_title":"AIP Advances","bibliographic_titleLang":"en"}]}]},"item_10001_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Alloying at the metal–semiconductor interface induced by femtosecond laser irradiation associated with thermal annealing was examined to ascertain whether an ohmic contact was formed on silicon carbide (SiC). In general, the electric field of the femtosecond laser beam destroys the crystal structure, but with lower thermal damage around the irradiated areas. In addition to the laser irradiation, we employed thermal annealing to enhance the diffusion of the metal atoms inside the SiC. After these processes, an ohmic contact was successfully formed on the SiC with thermal annealing at a temperature of 900 °C, which is 100 °C lower than with the conventional thermal annealing method.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10001_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"AIP Publishing","subitem_publisher_language":"en"}]},"item_10001_rights_15":{"attribute_name":"権利情報","attribute_value_mlt":[{"subitem_rights":"© 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).","subitem_rights_language":"en"}]},"item_10001_source_id_9":{"attribute_name":"収録物ID","attribute_value_mlt":[{"subitem_source_identifier":"21583226","subitem_source_identifier_type":"ISSN"}]},"item_10001_version_type_20":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_1715043197608":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access"}]},"item_1722929371688":{"attribute_name":"出版社版DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_language":"ja","subitem_relation_name_text":"10.1063/1.5036804"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.5036804","subitem_relation_type_select":"DOI"}}]},"item_1723180141928":{"attribute_name":"EID","attribute_value_mlt":[{"subitem_identifier_type":"URI","subitem_identifier_uri":"339621"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"カワカミ, ヒロキ","creatorNameLang":"ja"},{"creatorName":"カワカミ, ヒロキ","creatorNameLang":"ja-Kana"},{"creatorName":"Kawakami, Hiroki","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"直井, 美貴","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"73","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"富田, 卓朗","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"1239","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2018-06-19"}],"displaytype":"detail","filename":"aipadv_8_6_065204.pdf","filesize":[{"value":"371 KB"}],"format":"application/pdf","licensetype":"license_0","mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://tokushima-u.repo.nii.ac.jp/record/2004981/files/aipadv_8_6_065204.pdf"},"version_id":"59b0b555-8de9-4316-8417-983695c11791"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Femtosecond laser–assisted thermal annealing of Ni electrode on SiC substrate","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Femtosecond laser–assisted thermal annealing of Ni electrode on SiC substrate","subitem_title_language":"en"}]},"item_type_id":"40001","owner":"7","path":["1713853295607"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2018-06-19"},"publish_date":"2018-06-19","publish_status":"0","recid":"2004981","relation_version_is_last":true,"title":["Femtosecond laser–assisted thermal annealing of Ni electrode on SiC substrate"],"weko_creator_id":"7","weko_shared_id":-1},"updated":"2024-12-18T02:00:03.835462+00:00"}