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After annealing at 300 °C in nitrogen ambient, the sheet resistance of epitaxial graphene on a SiC substrate had a minimum value of 800 Ω/sq and the carrier density was estimated to be 1.2 × 1013 cm-2 for an n-type dopant. The adsorbed water layer, which acted as a p-type dopant with a carrier density of -7.4 × 1012 cm-2, was formed by deionized (DI) water treatment. The sheet resistances of graphene samples increased with humidity, owing to the counter doping effect. The estimated p-type doping amounts of saturated water vapor were -2.5 × 1012 cm-2 for DI-water-treated graphene and -3.5 × 1012 cm-2 for annealed graphene.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10001_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"The Japan Society of Applied Physics","subitem_publisher_language":"en"}]},"item_10001_rights_15":{"attribute_name":"権利情報","attribute_value_mlt":[{"subitem_rights":"© 2017 The Japan Society of Applied 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