| Item type |
文献 / Documents(1) |
| 公開日 |
2017-11-22 |
| アクセス権 |
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アクセス権 |
open access |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 出版社版DOI |
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識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.1143/JJAP.51.06FD06 |
| 出版タイプ |
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|
出版タイプ |
AM |
|
出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
| タイトル |
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タイトル |
Microscopic Raman Mapping of Epitaxial Graphene on 4H-SiC(0001) |
|
言語 |
en |
| 著者 |
O, Ryong-Sok
イワモト, アツシ
ニシ, ユウキ
フナセ, ユウヤ
ユアサ, タカヒロ
富田, 卓朗
永瀬, 雅夫
日比野, 浩樹
山口, 浩司
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
We propose a quality control method for wafer-scale epitaxial graphene grown on SiC substrates. The peak position of Raman spectra of epitaxial graphene is an excellent indicator of film quality and reveals irregularities, such as graphene thickness inhomogeneity and SiC substrate defects. A comparison of microscopic Raman maps and scanning probe microscopy images of the same position of the sample revealed that wave numbers of Raman peaks (G and 2D band peaks) were strongly correlated with the strain in the graphene film. The increase in number of graphene layers (2 to 3–4 layers) induced phonon softening (~6 cm-1) and broadening (~6 cm-1) of the 2D band peak. Significant phonon softening and abnormal broadening of the Raman peaks were observed at residual scratches on the SiC substrate. The quantitative layer number distribution of graphene on SiC is successfully estimated from the wave number distribution of the 2D band peak. |
|
言語 |
en |
| 書誌情報 |
en : Japanese Journal of Applied Physics
巻 51,
号 6S,
p. 06FD06,
発行日 2012-06-20
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| 収録物ID |
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収録物識別子タイプ |
ISSN |
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収録物識別子 |
13474065 |
| 収録物ID |
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収録物識別子タイプ |
ISSN |
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収録物識別子 |
00214922 |
| 収録物ID |
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収録物識別子タイプ |
NCID |
|
収録物識別子 |
AA11509854 |
| 収録物ID |
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|
収録物識別子タイプ |
NCID |
|
収録物識別子 |
AA12295836 |
| 出版者 |
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|
出版者 |
The Japan Society of Applied Physics |
|
言語 |
en |
| 権利情報 |
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|
言語 |
en |
|
権利情報 |
© 2012 The Japan Society of Applied Physics |
| EID |
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|
識別子 |
254935 |
|
識別子タイプ |
URI |
| 言語 |
|
|
言語 |
eng |
jjap_51_6S_06FD06.pdf (642 KB)
