| Item type |
文献 / Documents(1) |
| 公開日 |
2019-07-17 |
| アクセス権 |
|
|
アクセス権 |
open access |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| 出版社版DOI |
|
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
https://doi.org/10.7567/1347-4065/ab0891 |
|
|
言語 |
ja |
|
|
関連名称 |
10.7567/1347-4065/ab0891 |
| 出版タイプ |
|
|
出版タイプ |
AM |
|
出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
| タイトル |
|
|
タイトル |
Vertically stacked graphene tunnel junction with structured water barrier |
|
言語 |
en |
| 著者 |
Du, Jiyao
キムラ, ユキノブ
タハラ, マサアキ
マツイ, カズシ
テラタニ, ヒトシ
大野, 恭秀
永瀬, 雅夫
|
| 抄録 |
|
|
内容記述タイプ |
Abstract |
|
内容記述 |
We report a vertically stacked graphene tunnel junction with an atomically thin insulating layer for novel function devices. The insulating water layer sandwiched between graphene samples as a tunnel barrier which is fabricated through deionized (DI) water treatment of epitaxial graphene. Two graphene samples fabricated by SiC thermal decomposition are directly bonded to each other in a face-to-face manner. Vertically stacked graphene samples without DI water treated formed an ohmic junction. By inserting the structured water layer as tunnel barrier, the stacked junction exhibits Direct tunneling (DT) characteristics in a low-electric-field regime and Fowler-Nordheim tunneling (FNT) characteristics in a high-electric-field regime. The thickness of the structured water layer is estimated to be 0.28 nm by fitting the FNT formula. The very thin structured water layer is stable as tunnel barrier on epitaxial graphene for diode devices, which will have a widely application in electronic devices. |
|
言語 |
en |
| 書誌情報 |
en : Japanese Journal of Applied Physics
巻 58,
号 SD,
p. SDDE01,
発行日 2019-04-25
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| 収録物ID |
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収録物識別子タイプ |
ISSN |
|
収録物識別子 |
13474065 |
| 収録物ID |
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|
収録物識別子タイプ |
ISSN |
|
収録物識別子 |
00214922 |
| 収録物ID |
|
|
収録物識別子タイプ |
NCID |
|
収録物識別子 |
AA12295836 |
| 収録物ID |
|
|
収録物識別子タイプ |
NCID |
|
収録物識別子 |
AA11509854 |
| 出版者 |
|
|
出版者 |
The Japan Society of Applied Physics |
|
言語 |
en |
| 権利情報 |
|
|
言語 |
en |
|
権利情報 |
© 2019 The Japan Society of Applied Physics |
| EID |
|
|
識別子 |
352951 |
|
識別子タイプ |
URI |
| 言語 |
|
|
言語 |
eng |
jjap_58_SD_SDDE01.pdf (696 KB)
