| Item type |
文献 / Documents(1) |
| 公開日 |
2021-06-25 |
| アクセス権 |
|
|
アクセス権 |
open access |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| 出版社版DOI |
|
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
https://doi.org/10.5890/JVTSD.2020.12.001 |
|
|
言語 |
ja |
|
|
関連名称 |
10.5890/JVTSD.2020.12.001 |
| 出版タイプ |
|
|
出版タイプ |
AM |
|
出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
| タイトル |
|
|
タイトル |
Feasibility of Controlling Gas Concentration and Temperature Distributions in a Semiconductor Chamber with CT-TDLAS |
|
言語 |
en |
| 著者 |
ハヤシ, ダイスケ
ナカイ, ジュンヤ
ミナミ, マサカズ
カミモト, タカヒロ
出口, 祥啓
|
| 抄録 |
|
|
内容記述タイプ |
Abstract |
|
内容記述 |
The feasibility to control the gas concentration and temperature distributions in a semiconductor process chamber by measuring them was investigated. Gas concentration and temperature distributions for various flow rates were measured with the computed tomography-tunable diode laser absorption spectroscopy (CT-TDLAS). The infrared absorption spectra of multiple laser paths passing through the measured area were collected and the distributions of methane concentration and temperature in the chamber were reconstructed with the computed tomography (CT) calculations. The measured results indicated that the distributions can be independently controlled by measuring with the CT-TDLAS and adjusting the flow rates and the susceptor temperature. |
|
言語 |
en |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
Laser spectroscopy |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
Semiconductor process |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
Computed Tomography |
| 書誌情報 |
en : Journal of Vibration Testing and System Dynamics
巻 4,
号 4,
p. 297-309,
発行日 2020-12
|
| 収録物ID |
|
|
収録物識別子タイプ |
ISSN |
|
収録物識別子 |
24754811 |
| 収録物ID |
|
|
収録物識別子タイプ |
ISSN |
|
収録物識別子 |
2475482X |
| 出版者 |
|
|
出版者 |
L & H Scientific Publishing |
|
言語 |
en |
| EID |
|
|
識別子 |
362837 |
|
識別子タイプ |
URI |
| 言語 |
|
|
言語 |
eng |
jvtsd_4_4_297.pdf (1.62 MB)
