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Investigation of V/III ratio dependencies for optimizing AlN growth during reduced parasitic reaction in metalorganic vapor phase epitaxy
https://tokushima-u.repo.nii.ac.jp/records/2011828
https://tokushima-u.repo.nii.ac.jp/records/2011828d0763e36-8068-42cf-bc3e-063b63896d54
| 名前 / ファイル | ライセンス | アクション |
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srep_13_3308.pdf (1.66 MB)
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| Item type | 文献 / Documents(1) | |||||||||||||||||||||||||||||||||||||||||
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| 公開日 | 2024-07-18 | |||||||||||||||||||||||||||||||||||||||||
| アクセス権 | ||||||||||||||||||||||||||||||||||||||||||
| アクセス権 | open access | |||||||||||||||||||||||||||||||||||||||||
| 資源タイプ | ||||||||||||||||||||||||||||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||||||||||||||||||||||||||||
| 資源タイプ | journal article | |||||||||||||||||||||||||||||||||||||||||
| 出版社版DOI | ||||||||||||||||||||||||||||||||||||||||||
| 関連識別子 | https://doi.org/10.1038/s41598-023-30489-z | |||||||||||||||||||||||||||||||||||||||||
| 関連名称 | 10.1038/s41598-023-30489-z | |||||||||||||||||||||||||||||||||||||||||
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| 出版タイプ | VoR | |||||||||||||||||||||||||||||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||||||||||||||||||||||||||||||
| タイトル | ||||||||||||||||||||||||||||||||||||||||||
| タイトル | Investigation of V/III ratio dependencies for optimizing AlN growth during reduced parasitic reaction in metalorganic vapor phase epitaxy | |||||||||||||||||||||||||||||||||||||||||
| 著者 |
トミタ, アツシ
× トミタ, アツシ
× ミヤガワ, タクミ
× ヒラヤマ, ヒデキ
× 高島, 祐介
WEKO
945
× 直井, 美貴
WEKO
73
× 永松, 謙太郎
WEKO
963
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| 内容記述 | AlGaN-based ultraviolet (UV) light-emitting diodes (LEDs) are expected to have various applications, including sensing and printing, and light with ultraviolet-C (UVC) wavelengths has a virus inactivation effect. The metalorganic vapor phase epitaxy (MOVPE) method has been used to fabricate LED devices with film control and impurity doping. However, to achieve high luminous efficiency, highly crystalline aluminum nitride (AlN) must be grown in the underlying layer. Although high temperatures are required to grow high-quality AlN for strong migration at the surface, there is a trade-off in the high temperature promoting parasitic reactions. These parasitic reactions are more dominant at a high V/III ratio with more raw material in the case of using the conventional MOVPE. Here, we used jet stream gas flow MOVPE to investigate the effect of V/III ratio dependencies in optimizing AlN growth and without affecting parasitic reaction conditions. As a result, trends of typical AlN crystal growth at V/III-ratio dependencies were obtained. AlN is more stable at a higher V/III ratio of 1000, exhibiting a double atomic step surface, and the crystal orientation is further improved at 1700 °C compared to that at a lower V/III ratio. | |||||||||||||||||||||||||||||||||||||||||
| 書誌情報 |
en : Scientific Reports 巻 13, p. 3308, 発行日 2023-02-27 |
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| 収録物識別子タイプ | ISSN | |||||||||||||||||||||||||||||||||||||||||
| 収録物識別子 | 20452322 | |||||||||||||||||||||||||||||||||||||||||
| 出版者 | ||||||||||||||||||||||||||||||||||||||||||
| 出版者 | Springer Nature | |||||||||||||||||||||||||||||||||||||||||
| 権利情報 | ||||||||||||||||||||||||||||||||||||||||||
| 権利情報 | This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/. | |||||||||||||||||||||||||||||||||||||||||
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| 識別子 | 394228 | |||||||||||||||||||||||||||||||||||||||||
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| 言語 | eng | |||||||||||||||||||||||||||||||||||||||||
