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Effect of contact force on diode characteristics of Rh/epitaxial graphene/n-SiC
https://tokushima-u.repo.nii.ac.jp/records/2013138
https://tokushima-u.repo.nii.ac.jp/records/2013138285c4ddb-db77-4097-a1c7-48aa7575fd1a
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
jjap_64_3_03SP49.pdf (1.2 MB)
Download is available from 2026/3/17.
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| Item type | 文献 / Documents(1) | |||||||||||||||||||
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| 公開日 | 2025-04-22 | |||||||||||||||||||
| アクセス権 | ||||||||||||||||||||
| アクセス権 | embargoed access | |||||||||||||||||||
| アクセス権URI | http://purl.org/coar/access_right/c_f1cf | |||||||||||||||||||
| 資源タイプ | ||||||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||||||
| 資源タイプ | journal article | |||||||||||||||||||
| 出版社版DOI | ||||||||||||||||||||
| 関連識別子 | https://doi.org/10.35848/1347-4065/adb758 | |||||||||||||||||||
| 関連名称 | 10.35848/1347-4065/adb758 | |||||||||||||||||||
| 出版タイプ | ||||||||||||||||||||
| 出版タイプ | AM | |||||||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||||||||||
| タイトル | ||||||||||||||||||||
| タイトル | Effect of contact force on diode characteristics of Rh/epitaxial graphene/n-SiC | |||||||||||||||||||
| 著者 |
Nabemoto, Asato
× Nabemoto, Asato
× 大野, 恭秀
WEKO
740
× 永瀬, 雅夫
WEKO
420
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| 抄録 | ||||||||||||||||||||
| 内容記述 | The contact force dependence of the electrical characteristics of metal/epitaxial graphene/n-SiC diodes was investigated using conductive contact-mode scanning probe microscopy (SPM) with a Rh-coated conductive nano probe. Graphene nano-islands formed by the thermal decomposition method were used. The measured electrical characteristics showed excellent rectification behavior. The on-off ratio improved with increasing contact force. The estimated Schottky barrier height decreased with increasing contact force. In the low contact force regime (< 100 nN), Fowler-Nordheim tunneling (FNT) phenomena were observed, as the carbon layers (graphene and buffer layer) acted as a tunneling barrier. | |||||||||||||||||||
| キーワード | ||||||||||||||||||||
| 主題 | epitaxial graphene | |||||||||||||||||||
| キーワード | ||||||||||||||||||||
| 主題 | n-SiC | |||||||||||||||||||
| キーワード | ||||||||||||||||||||
| 主題 | contact force | |||||||||||||||||||
| キーワード | ||||||||||||||||||||
| 主題 | Fowler-Nordheim tunneling | |||||||||||||||||||
| キーワード | ||||||||||||||||||||
| 主題 | Scanning Probe Microscopy | |||||||||||||||||||
| 書誌情報 |
en : Japanese Journal of Applied Physics 巻 64, 号 3, p. 03SP49, 発行日 2025-03-17 |
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| 収録物ID | ||||||||||||||||||||
| 収録物識別子タイプ | PISSN | |||||||||||||||||||
| 収録物識別子 | 00214922 | |||||||||||||||||||
| 収録物ID | ||||||||||||||||||||
| 収録物識別子タイプ | EISSN | |||||||||||||||||||
| 収録物識別子 | 13474065 | |||||||||||||||||||
| 収録物ID | ||||||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||||||
| 収録物識別子 | AA12295836 | |||||||||||||||||||
| 出版者 | ||||||||||||||||||||
| 出版者 | The Japan Society of Applied Physics | |||||||||||||||||||
| 出版者 | ||||||||||||||||||||
| 出版者 | IOP Publishing | |||||||||||||||||||
| 備考 | ||||||||||||||||||||
| 値 | This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/adb758. | |||||||||||||||||||
| 権利情報 | ||||||||||||||||||||
| 権利情報 | This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to. | |||||||||||||||||||
| EID | ||||||||||||||||||||
| 識別子 | 421407 | |||||||||||||||||||
| 言語 | ||||||||||||||||||||
| 言語 | eng | |||||||||||||||||||
