| Item type |
文献 / Documents(1) |
| 公開日 |
2024-07-11 |
| アクセス権 |
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アクセス権 |
open access |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| 出版社版DOI |
|
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|
識別子タイプ |
DOI |
|
|
関連識別子 |
https://doi.org/10.1038/s41598-023-29150-6 |
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言語 |
ja |
|
|
関連名称 |
10.1038/s41598-023-29150-6 |
| 出版タイプ |
|
|
出版タイプ |
VoR |
|
出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| タイトル |
|
|
タイトル |
High growth temperature for AlN by jet stream gas flow metalorganic vapor phase epitaxy |
|
言語 |
en |
| 著者 |
永松, 謙太郎
ミヤガワ, タクミ
トミタ, アツシ
ヒラヤマ, ヒデキ
高島, 祐介
直井, 美貴
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| 抄録 |
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|
内容記述タイプ |
Abstract |
|
内容記述 |
Deep ultraviolet light-emitting diodes have attracted considerable attention for realizing virus inactivation applications. The UV-LEDs use the AlN underlying layer and the plane sapphire substrate. However, the low growth temperature in AlN underlying layer is grown by limited growth temperature in conventional MOVPE, and high temperature is preferable for AlN growth. Furthermore, the AlN underlying layer has many dislocations owing to the active layer in the device region when the flat sapphire substrate was used with a dislocation value of > 109 cm−2. We showed the high-temperature crystal growth of AlN with a temperature of 1700 °C by high temperature and gas flow velocity MOVPE. The achieved dislocation density was ~ 4 × 108 cm−2. Additionally, this data means the low dislocation densities in the AlN layer with a growth time of only 15 min and a dislocation density of < 1 × 109 cm−2 are obtained. The AlN growth temperature exceeding 1550 °C decreases the growth rate. These results indicate desorption from the surface of the substrate in a hydrogen atmosphere. Furthermore, the characteristic dislocation behavior of AlN in high-temperature growth at 1700 °C was elucidated from TEM images. |
|
言語 |
en |
| 書誌情報 |
en : Scientific Reports
巻 13,
p. 2438,
発行日 2023-02-10
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| 収録物ID |
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収録物識別子タイプ |
ISSN |
|
収録物識別子 |
20452322 |
| 出版者 |
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|
出版者 |
Springer Nature |
|
言語 |
en |
| 権利情報 |
|
|
言語 |
en |
|
権利情報 |
This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/. |
| EID |
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|
識別子 |
394227 |
|
識別子タイプ |
URI |
| 言語 |
|
|
言語 |
eng |
srep_13_2438.pdf (3.5 MB)
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