| Item type |
文献 / Documents(1) |
| 公開日 |
2023-07-27 |
| アクセス権 |
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アクセス権 |
open access |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 出版社版DOI |
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識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.1109/LPT.2022.3144985 |
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|
言語 |
ja |
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|
関連名称 |
10.1109/LPT.2022.3144985 |
| 出版タイプ |
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|
出版タイプ |
AM |
|
出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
| タイトル |
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|
タイトル |
112 Gb/s PAM-4 Silicon Photonics Receiver Integrated With SiGe-BiCMOS Linear TIA |
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言語 |
en |
| 著者 |
オカモト, ダイスケ
スズキ, ヤスユキ
タケムラ, コウイチ
藤方, 潤一
ナカムラ, タカヒロ
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| 抄録 |
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内容記述タイプ |
Abstract |
|
内容記述 |
We have developed a silicon photonics receiver integrated with a SiGe-BiCMOS linear transimpedance amplifier (TIA) using the flip-chip bonding technology to assist in resolving the I/O bottleneck problem in inter-chip data communication. The proposed device demonstrated optical 112 Gb/s four-level pulse amplitude modulation (PAM-4) operations and clear eye openings without any equalization for the pseudorandom binary sequence 215 – 1 signal. The 3 dB bandwidth and transimpedance gain were designed to be 37.1 GHz and 60.1 dBΩ, respectively, at a supply voltage of 3.3 V. The consumption current of the linear TIA was 95.1 mA, and it resulted in a power consumption of 314 mW (2.8 pJ/bit). A linear TIA circuit is a key technology for PAM-4 operation; therefore, we discussed the linearity of our receiver response through eye diagrams and simulation. The measured eye diagrams agreed with the simulation results, and the proposed device maintained a linear response for up to 450 μAp-p input current. In addition, its operation rate of 112 Gb/s is the highest operation rate reported for a silicon photonics PAM-4 receiver based on flip-chip 3D integration with a germanium photodetector and a SiGe-BiCMOS linear TIA. |
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言語 |
en |
| キーワード |
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言語 |
en |
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主題Scheme |
Other |
|
主題 |
Linear amplifier |
| キーワード |
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言語 |
en |
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主題Scheme |
Other |
|
主題 |
optical interconnects |
| キーワード |
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言語 |
en |
|
主題Scheme |
Other |
|
主題 |
optical receivers |
| キーワード |
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|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
optoelectronic integrated circuit |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
PAM-4 |
| キーワード |
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|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
SiGe-BiCMOS |
| キーワード |
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|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
silicon photonics |
| 書誌情報 |
en : IEEE Photonics Technology Letters
巻 34,
号 3,
p. 189-192,
発行日 2022-01-20
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| 収録物ID |
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収録物識別子タイプ |
ISSN |
|
収録物識別子 |
10411135 |
| 収録物ID |
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|
収録物識別子タイプ |
ISSN |
|
収録物識別子 |
19410174 |
| 収録物ID |
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|
収録物識別子タイプ |
NCID |
|
収録物識別子 |
AA10681067 |
| 出版者 |
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|
出版者 |
IEEE |
|
言語 |
en |
| 権利情報 |
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|
言語 |
en |
|
権利情報 |
© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
| EID |
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識別子 |
398610 |
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識別子タイプ |
URI |
| 言語 |
|
|
言語 |
eng |
ptl_34_3_189.pdf (727 KB)
